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| SMT Multi TOPLED(R) SFH 7221 Vorlaufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 0.8 0.6 2 C E 1 Package marking 4 3 0.1 typ 2.1 1.7 0.9 0.7 (2.4) C 3.4 3.0 A 1.1 0.5 3.7 3.3 0.18 0.12 0.6 0.4 GPL06965 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type SFH 7221 Bestellnummer Ordering Code on request Wesentliche Merkmale q Geeignet fur Vapor-Phase Loten und IR-Reflow Loten Features q Suitable for vapor-phase and IR-reflow soldering Semiconductor Group 1 1997-11-01 SFH 7221 Grenzwerte Maximum Ratings Bezeichnung Description Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom (LED) Forward current (LED) Kollektorstrom (Transistor) Collector current (Transistor) Stostrom Surge current t 10 s, D = 0.005 Sperrspannung (LED) Reverse voltage (LED) Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) Verlustleistung Total power dissipation Warmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board* (Padgroe 16 mm 2) mounting on pcb* (pad size 16 mm 2) Sperrschicht / Lotstelle junction / soldering joint * PC-board: G30/FR4 Symbol Symbol IRED Wert Value Transistor Einheit Unit Top Tstg Tj IF IC IFM - 55 ... + 100 - 55 ... + 100 C - 55 ... + 100 - 55 ... + 100 C + 100 100 - 2500 + 100 - 15 75 C mA mA mA VR VCE 5 - - 35 V V Ptot 180 165 mW Rth JA Rth JS 500 400 450 - K/W K/W Hinweis / Notes Die angegebenen Grenzdaten gelten fur einen Chip. The stated maximum ratings refer to one chip. Semiconductor Group 2 1997-11-01 SFH 7221 Kennwerte IRED (TA = 25 C) Characteristics IRED Bezeichnung Description Wellenlange der Strahlung Wavelength of radiation IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax, IF = 100 mA Spectral bandwidth at 50 % of Imax, IF = 100 mA Abstrahlwinkel Viewing angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimensions of active chip area Symbol Wert Symbol Value peak 880 Einheit Unit nm 80 60 0.16 0.4 x 0.4 0.5 nm Grad deg. mm2 mm s A LxB LxW Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 % tr, tf Switching times, Ie from 10 % to 90 % and from 90 % to 10 % IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e Temperature coefficient of Ie bzw. e IF = 100 mA, IF = 100 mA Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA Temperaturkoeffizient von Temperature coefficient of IF = 100 mA Co 25 pF VF VF IR 1.5 ( 1.8) 3.0 ( 3.8) 0.01 ( 1) V V A e 23 mW TCI - 0.5 %/K TCV -2 mV/K TC + 0.25 nm/K Semiconductor Group 3 1997-11-01 SFH 7221 Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Symbol Ie Werte Values >4 Einheit Unit mW/sr Ie typ. 48 mW/sr IRED Radiation characteristics Irel = f () Phototransistor Directional characteristics Srel = f () 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 4 1997-11-01 SFH 7221 Kennwerte Fototransistor (TA = 25 C, = 880 nm) Characteristics Phototransistor Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Symbol Symbol S max Wert Value 860 380 ... 1150 Einheit Unit nm nm Bestrahlungsempfindliche Flache ( 240 m) A Radiant sensitive area ( 240 m) Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 5 A, Ee = 0.1 mW/cm2 LxB H 0.045 0.45 x 0.45 0.5 ... 0.7 mm2 mm x mm mm CCE 60 5.0 Grad deg. pF ICEO 1 ( 200) nA IPCE 16 A tr, tf 7 s VCEsat 150 mV Semiconductor Group 5 1997-11-01 SFH 7221 IRED Forward current IF = f (VF) TA = 25 C 10 1 OHR00881 Rel luminous intensity IV / IV(10 mA) = f (IF) Perm. pulse handling capability IF = f (tp) TA = 25 C Duty cycle D = parameter, TA = 25 C 10 2 e (100mA) 10 1 10 3 0.1 0.2 0.5 OHR00878 10 4 mA OHR00886 F A e F 10 0 D = 0.005 0.01 0.02 0.05 10 0 10 -1 10 -1 10 2 DC 10 -2 10 -2 D= 10 -3 10 -3 0 1 2 3 4 5 6 V VF 8 tp T tp F 10 0 10 1 10 2 10 3 mA 10 4 F T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 10 1 s 10 2 tp Max. permissible forward current IF = f (TA) 120 OHR00883 Relative spectral emission Irel = f () 100 rel % 80 OHR00877 F mA 100 80 R thjA = 450 K/W 60 60 40 40 20 20 0 0 20 40 60 80 100 C 120 TA 0 750 800 850 900 950 nm 1000 Semiconductor Group 6 1997-11-01 SFH 7221 Phototransistor Rel.spectral sensitivity Srel = f () 100 OHF01121 Photocurrent IPCE = f (VCE), Ee = Parameter PCE 10 0 mA OHF01529 Dark current ICEO = f (VCE), E = 0 CEO 10 1 nA OHF01527 S rel % 80 1 mW cm 2 mW cm 2 mW cm 2 0.5 10 0 60 10 -1 0.25 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 10 -2 0 5 10 15 20 25 30 V 35 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Total power dissipation Ptot = f (TA) 200 mW OHF00871 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 5.0 OHF01528 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V PCE 25 1.4 1.2 PCE 1.6 OHF01524 C CE pF 4.0 3.5 P tot 160 120 3.0 2.5 1.0 0.8 0.6 0.4 80 2.0 1.5 40 1.0 0.5 0.2 0 -25 0 0 20 40 60 80 C 100 TA 0 10 -2 10 -1 10 0 10 1 V 10 2 V CE 0 25 50 75 C 100 TA Dark current ICEO = f (TA), VCE = 5 V, E = 0 CEO 10 3 nA OHF01530 Photocurrent IPCE = f (Ee), VCE = 5 V 10 3 A OHF00312 PCE 10 2 10 2 10 1 10 1 10 0 10 0 10 -1 -25 0 25 50 75 C 100 TA 10 -1 10 -3 10 -2 m W/cm 2 10 0 Ee Semiconductor Group 7 1997-11-01 |
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